High Performance Resonant Tunneling Electronic Circuit with Suitable Resistance Parameters

Well-defined experimental and simulating single peak to valley current density ratio (PVCDR) resonant tunneling electronic circuit (RTEC) element is proposed in this research. The variation of passive element value in RTEC structure is explored using simulation method, which obtains the optimum PVCDR values about 66. The simulating peak current density (PCD) value is such high as 38 mA. Even though the experimental PCD value is less, but the PVCDR value is as high as 22.5, which value is favorably compared with semiconductor resonant tunneling devices (RTDs) in single PVCDR RTEC element. The obvious triple negative differential resistance (NDR) is also completed using composition of three suitable single RTEC elements. Also, experimental triple PVCDR RTEC element significantly exhibits three NDR curves with obvious three PVCDR values about 3.4, 3.8, and 6.0, respectively. Both peak voltage (PV) value and valley voltage (VV) values of experimental triple PVCDR RTEC element is less than 2.8 V, which value is profitable in development of commercial product. Power consumption of triple PVCDR RTEC element is as low as 75.5 μW, which low power consumption will shrink the difficulty of element packaging in heat dissipation.